(10 PCS) STB11NM60FD-1 STMICRO, Trans MOSFET N-CH 600V 11A, I2PAK

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THIS IS FOR (10 PCS) OF STB11NM60FD-1 BY STMICRO

Trans MOSFET N-CH 600V 11A, I2PAK

Part #: STB11NM60FD-1

Part Category: Transistors

Manufacturer: STMicroelectronics, Inc.

Description: Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Mfr Package Description ROHS COMPLIANT, TO-262, I2PAK-3

REACH Compliant Yes

EU RoHS Compliant Yes

China RoHS Compliant Yes

Status Discontinued

Avalanche Energy Rating (Eas) 350.0 mJ

Configuration SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) 11.0 A

Drain Current-Max (ID) 11.0 A

Drain-source On Resistance-Max 0.45 ohm

DS Breakdown Voltage-Min 600.0 V

FET Technology METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code TO-262AA

JESD-30 Code R-PSIP-T3

JESD-609 Code e3

Moisture Sensitivity Level 1

Number of Elements 1.0

Number of Terminals 3

Operating Mode ENHANCEMENT MODE

Operating Temperature-Max 150.0 Cel

Package Body Material PLASTIC/EPOXY

Package Shape RECTANGULAR

Package Style IN-LINE

Peak Reflow Temperature (Cel) 245

Polarity/Channel Type N-CHANNEL

Power Dissipation-Max (Abs) 160.0 W

Pulsed Drain Current-Max (IDM) 44.0 A

Qualification Status Not Qualified

Sub Category FET General Purpose Power

Surface Mount NO

Terminal Finish Tin (Sn)

Terminal Form THROUGH-HOLE

Terminal Position SINGLE

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Transistor Application SWITCHING

Transistor Element Material SILICON

Additional Feature AVALANCHE RATED