(10 PCS) IRFD220 Trans MOSFET N-CH 200V 0.8A 4-Pin DIP
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THIS LISTING IS FOR (10 PCS) OF IRFD220 BY IR
Trans MOSFET N-CH 100V 1.3A 4-Pin DIP
Part #: IRFD220
Part Category: Transistors
Manufacturer: International Rectifier
Description: Small Signal Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mfr Package Description DIP-4
REACH Compliant Yes
Status Transferred
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 0.8 A
Drain-source On Resistance-Max 0.8 ohm
DS Breakdown Voltage-Min 200.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.3 W
Power Dissipation-Max (Abs) 1.0 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON