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(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS
(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS
(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS
(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS
(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS

(1 PC) NT5AD512M8D3-HR Nanya, DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS

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THIS IS FOR (1 PC) OF NT5AD512M8D3-HR BY Nanya
DDR4 DRAM, 512MX8, CMOS, TFBGA78 ROHS

Part #: NT5AD512M8D3-HR
Part Category: Memory ICs
Manufacturer: Nanya Technology Corporation
Description: DDR4 DRAM, 512MX8, CMOS, PBGA78

Mfr Package Description TFBGA-78
EU RoHS Compliant Yes
Status Active
Access Mode FOUR BANK PAGE BURST
Clock Frequency-Max (fCLK) 1333.0  MHz
Interleaved Burst Length 4,8
I/O Type COMMON
JESD-30 Code R-PBGA-B78
Memory Density 4.294967296E9  bit
Memory IC Type DDR4 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 78
Number of Words 5.36870912E8  words
Number of Words Code 512M
Operating Mode SYNCHRONOUS
Operating Temperature-Min 0.0  Cel
Operating Temperature-Max 95.0  Cel
Organization 512MX8
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA78,9X13,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max 1.2  mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.05154  Amp
Supply Current-Max 0.09328  Amp
Supply Voltage-Nom (Vsup) 1.2  V
Supply Voltage-Min (Vsup) 1.14  V
Supply Voltage-Max (Vsup) 1.26  V
Surface Mount YES
Technology CMOS
Terminal Form BALL
Terminal Pitch 0.8  mm
Terminal Position BOTTOM
Length 10.5  mm
Width 7.5  mm
Additional Feature AUTO/SELF REFRESH