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(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA
(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA
(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA
(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA
(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA

(1 PC) IRF452 Power Field-Effect Transistor N-Channel Metal-oxide TO-3/TO-204AA

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THIS LISTING IS FOR (1 PC) OF IRF452 BY IR
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor TO-3/TO-204AA

Part #: IRF452

Part Category: Transistors
Manufacturer: International Rectifier
Description: Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Status Transferred
Case Connection DRAIN
Configuration SINGLE
Drain Current-Max (Abs) (ID) 11.0  A
Drain Current-Max (ID) 11.0  A
Drain-source On Resistance-Max 0.5  ohm
DS Breakdown Voltage-Min 500.0  V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0  Cel
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125.0  W
Pulsed Drain Current-Max (IDM) 44.0  A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON