(1 PC) BUZ355 Power Field-Effect Transistor, 6A, 800V, 1.5ohm, N-Channel, MOSFET
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THIS LISTING IS FOR (1 PC) OF BUZ355 BY SIEMENS
Power Field-Effect Transistor, 6A, 800V, 1.5ohm, N-Channel, MOSFET
Part #: BUZ355
Part Category: Transistors
Manufacturer: Siemens Process Instrumentation
Description: Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
Status Transferred
Configuration SINGLE
Drain Current-Max (Abs) (ID) 6.0 A
Drain Current-Max (ID) 6.0 A
Drain-source On Resistance-Max 1.5 ohm
DS Breakdown Voltage-Min 800.0 V
Feedback Cap-Max (Crss) 140.0 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-218
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125.0 W
Power Dissipation-Max (Abs) 125.0 W
Pulsed Drain Current-Max (IDM) 21.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 570.0 ns
Turn-on Time-Max (ton) 230.0 ns