(1 PC) 2SK3502-01MR FUJI Power FET, 12A, 600V, 0.75ohm, N-Channel, TO-220AB ROHS
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THIS LISTING IS FOR (1 PC) OF 2SK3502-01MR BY FUJI
Power FET, 12A, 600V, 0.75ohm, N-Channel, TO-220AB ROHS
Part #: 2SK3502-01MR
Part Category: Transistors
Manufacturer: Fuji Electric Corp. of America
Description: Power Field-Effect Transistor, 12A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mfr Package Description TO-220F, 3 PIN
Status Active
Avalanche Energy Rating (Eas) 183.0 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (Abs) (ID) 10.0 A
Drain Current-Max (ID) 12.0 A
Drain-source On Resistance-Max 0.75 ohm
DS Breakdown Voltage-Min 600.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1.0
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150.0 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50.0 W
Pulsed Drain Current-Max (IDM) 48.0 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON