(10PCS) IRF530NS Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK

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THIS LISTING IS FOR (10PCS) OF IRF530NS BY INTERNATIONAL RECTIFIER

SPECIFICATIONS

Mfr Package Description D2PAK-3
Status Transferred
Avalanche Energy Rating (Eas) 93.0 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 17.0 A
Drain-source On Resistance-Max 0.09 ohm
DS Breakdown Voltage-Min 100.0 V
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1.0
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60.0 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Additional Feature AVALANCHE RATED