(500 PCS) IRF610A SAM 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Tax included.
THIS LISTING IS FOR (500 PCS) OF IRF610A BY SAMSUNG
(PICTURE SHOWS (6 PCS) BUT LISTING IS FOR (500 PCS)
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Manufacturer: Samsung Semiconductor Division
Description: 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description
(PICTURE SHOWS (6 PCS) BUT LISTING IS FOR (500 PCS)
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part #: IRF610A
Part Category: TransistorsManufacturer: Samsung Semiconductor Division
Description: 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description
TO-220, 3 PIN | |
Status | Transferred |
Avalanche Energy Rating (Eas) | 44.0 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (Abs) (ID) | 3.3 A |
Drain Current-Max (ID) | 3.3 A |
Drain-source On Resistance-Max | 1.5 ohm |
DS Breakdown Voltage-Min | 200.0 V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1.0 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150.0 Cel |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 38.0 W |
Pulsed Drain Current-Max (IDM) | 10.0 A |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Element Material | SILICON |