(10) IRF610A SAMSUNG 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Tax included.
THIS LISTING IS FOR (10) OF IRF610A BY SAMSUNG
(PICTURE SHOWS (6 PCS) BUT LISTING IS FOR (10 PCS)
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Manufacturer: Samsung Semiconductor Division
Description: 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description
(PICTURE SHOWS (6 PCS) BUT LISTING IS FOR (10 PCS)
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part #: IRF610A
Part Category: TransistorsManufacturer: Samsung Semiconductor Division
Description: 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Mfr Package Description
| TO-220, 3 PIN | |
| Status | Transferred |
| Avalanche Energy Rating (Eas) | 44.0 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 3.3 A |
| Drain Current-Max (ID) | 3.3 A |
| Drain-source On Resistance-Max | 1.5 ohm |
| DS Breakdown Voltage-Min | 200.0 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1.0 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150.0 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 38.0 W |
| Pulsed Drain Current-Max (IDM) | 10.0 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
