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(25 PCS) DMN63D8LW-13 DI, N-Channel 30 V 380mA (Ta) 300mW (Ta) SOT-323 ROHS
(25 PCS) DMN63D8LW-13 DI, N-Channel 30 V 380mA (Ta) 300mW (Ta) SOT-323 ROHS
(25 PCS) DMN63D8LW-13 DI, N-Channel 30 V 380mA (Ta) 300mW (Ta) SOT-323 ROHS

(25 PCS) DMN63D8LW-13 DI, N-Channel 30 V 380mA (Ta) 300mW (Ta) SOT-323 ROHS

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THIS IS FOR (25 PCS) OF DMN63D8LW-13 BY DI
N-Channel 30 V 380mA (Ta) 300mW (Ta) SOT-323 ROHS

Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS:  YES
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-323-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 380 mA
Rds On - Drain-Source Resistance: 2.8 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Qg - Gate Charge: 900 pC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 420 mW
Channel Mode: Enhancement
Series: DMN63
Packaging: Reel
Packaging: Cut Tape
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 16.7 ns
Forward Transconductance - Min: 80 mS
Product Type: MOSFET
Rise Time: 3.9 ns
10000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11.4 ns
Typical Turn-On Delay Time: 2.3 ns
Unit Weight: 0.000212 oz